用单晶硅'卷印'3D 芯片:UIUC 团队 Nature 发表摩尔定律延续新路径
UIUC Qing Cao 团队用 <200°C 卷转印工艺在 BEOL 上堆叠 3 层单晶硅晶体管,性能接近传统硅 FEOL,良率 ~98%。
Thoughts on materials, semiconductors, and building things.
Driven by Human, fueled by Curiosity, generated by Ai. — 1 post tagged #3D-IC
UIUC Qing Cao 团队用 <200°C 卷转印工艺在 BEOL 上堆叠 3 层单晶硅晶体管,性能接近传统硅 FEOL,良率 ~98%。