193nm 光刻 BARC：Brewer Science 65nm 节点论文解读 | 193nm Lithography BARC: Brewer Science 65nm Node Paper

Paper: "New BARC Materials for the 65-nm Node in 193-nm Lithography" — Neef et al., SPIE Proc. Vol. 5376, 2004
DOI: 10.1117/12.535423

核心发现 | Core Findings

Brewer Science 在 2004 年 SPIE 大会上发表了一篇关于 底部抗反射涂层（BARC） 的经典论文，开发了两种用于 193nm 光刻的新型快刻蚀 BARC 材料——EXP03087B（第一极小值）和 EXP03066（第二极小值）。

Brewer Science published a classic SPIE 2004 paper on bottom anti-reflective coatings (BARC), developing two novel fast-etching BARC materials for 193nm lithography — EXP03087B (first minimum) and EXP03066 (second minimum).

光学参数 | Optical Properties

指标 Metric	EXP03087B	EXP03066
折射率实部 n / Real refractive index	1.70	1.71
消光系数 k / Extinction coefficient	0.50	0.31
最小反射率厚度 / Min reflectivity thickness	32 nm	88 nm
最小反射率 / Min reflectivity	0.2%	0.6%
刻蚀速率 CF₄ / Etch rate CF₄	42 Å/s	63 Å/s
刻蚀速率 HBr/O₂ / Etch rate HBr/O₂	—	68 Å/s

关键实验结果 | Key Experimental Results

溶剂抗性测试 | Solvent Resistance

两种 BARC 在热固后均不与光刻胶混溶，且不受碱性显影液影响。

Both BARCs were immiscible with photoresists after thermosetting and unaffected by base developer.

旋涂碗兼容性 | Spin-Bowl Compatibility

两种材料在乙基乳酸酯、丙酮、庚酮、PGME、PGMEA 等光刻常用溶剂中均表现出 100% 可去除性——这意味着可以在同一旋涂设备中与光刻胶共用旋涂碗，降低设备成本。

Both materials showed 100% removability with common photolithography solvents — meaning they can be used in the same spin bowl as photoresists, reducing equipment costs.

光刻图形 | Lithography Profiles

EXP03087B（第一极小值）+ JSR AR1221J：

90 nm 密集线（1:1 线空比），方形轮廓，线条间清除良好，线边缘粗糙度低
焦深 DOF = 0.5 μm

EXP03087B + FFA GAR8107：

80 nm 密集线，方形轮廓
DOF = 0.5 μm

EXP03066（第二极小值）+ FFA GAR8105G1：

100 nm 密集线，方形轮廓，清除良好
DOF = 0.6 μm

EXP03087B (first minimum) + JSR AR1221J:

90 nm dense lines (1:1 L/S), square profiles, good clearing, low line edge roughness
DOF = 0.5 μm

EXP03087B + FFA GAR8107:

80 nm dense lines, square profiles
DOF = 0.5 μm

EXP03066 (second minimum) + FFA GAR8105G1:

100 nm dense lines, square profiles, good clearing
DOF = 0.6 μm

为什么这篇论文重要 | Why This Paper Matters

1. 极小值厚度策略 | Minimum Thickness Strategy

这篇论文同时探讨了第一极小值和第二极小值两种 BARC 设计路线。第一极小值 BARC（32 nm）刻蚀偏置小，但需要更薄；第二极小值 BARC（88 nm）刻蚀偏置大，但工艺窗口更宽。这是光刻工艺中经典的 trade-off。

This paper explores both first minimum and second minimum BARC design routes simultaneously. First minimum BARC (32 nm) has smaller etch bias but requires thinner coating; second minimum BARC (88 nm) has larger etch bias but wider process window. Classic trade-off in lithography.

2. 快刻蚀 BARC 的优势 | Advantages of Fast-Etching BARC

EXP03087B 的 CF₄ 刻蚀速率达到 42 Å/s（相比基准 ARC-29A 的 40 Å/s），而 EXP03066 更是达到了 63 Å/s（CF₄）和 68 Å/s（HBr/O₂）。快刻蚀意味着更少的等离子体损伤和更好的图形转移保真度。

EXP03087B's CF₄ etch rate reached 42 Å/s (vs. ARC-29A baseline at 40 Å/s), while EXP03066 achieved 63 Å/s (CF₄) and 68 Å/s (HBr/O₂). Fast etching means less plasma damage and better pattern transfer fidelity.

3. 与科华研发的关联 | Connection to Kempur's R&D

BARC 材料是光刻胶工艺中不可或缺的底层材料。这篇 2004 年的论文展示了 Brewer Science 在 193nm 光刻 早期的 BARC 开发思路——包括材料合成路线（三环氧丙基异氰脲酸酯与芳香族羧酸反应）、光学常数调控、以及完整的表征流程。这对理解当今 ArFi 浸没式光刻 BARC 材料的发展路径有重要参考价值。

BARC materials are essential underlayers in photolithography. This 2004 paper demonstrates Brewer Science's early BARC development approach for 193nm lithography — including synthesis route (trisepoxypropyl isocyanurate with aromatic carboxylic acids), optical constant tuning, and comprehensive characterization. Valuable reference for understanding today's ArFi immersion lithography BARC material evolution.

延伸阅读 | Further Reading

Posted: 2026-06-01 | Source: SPIE Advances in Resist Technology and Processing XXI